MOS transistor manufacturing
US7556995B2 · kind B2 · utility
7Cited by
5References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 27, 2006 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Feb 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor made in monolithic form, vias contacting the gate and the source and drain regions of the transistor being formed on the other side of the channel region with respect to the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.