Methods of forming transistor devices
US7557002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2006 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Apr 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.