Patent · US Active

Method of producing microcystalline silicon germanium suitable for micromachining

US7557027B2 · kind B2 · utility

2Cited by

0References

20Claims

0Family size

Assignee

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

Ann Witvrouw · Herent, BE
Maria Gromova · Leuven, BE
Marc Schaekers · Leuven, BE
Serge Vanhaelemeersch · Leuven, BE
Brenda Eyckens · Leuven, BE

Key dates

Filing date	Jan 24, 2006
Grant date	Jul 7, 2009
Priority date	—
Expiry date	Feb 11, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0262
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a germanium source in a reaction zone to grow the structural SiGe layer. Hydrogen is introduced into the reaction zone and it may be used to dilute the silicon source and the germanium source. The resultant reaction occurs at temperatures below 450 degrees C., thereby preventing degradation of electronic device and/or other devices/materials located in the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.