Phase change memory devices including memory cells having different phase change materials and related methods and systems
US7558100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jan 21, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device may include an integrated circuit substrate and first and second phase change memory elements on the integrated circuit substrate. The first phase change memory element may include a first phase change material having a first crystallization temperature. The second phase change memory element may include a second phase change material having a second crystallization temperature. Moreover, the first and second crystallization temperatures may be different so that the first and second phase change memory elements are programmable at different temperatures. Related methods and systems are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.