Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot
US7559988B2 · kind B2 · utility
5Cited by
18References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Aug 31, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.