Silicon/silcion germaninum/silicon body device with embedded carbon dopant

US7560326B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Anda C. Mocuta · Hopewell Junction, US
• Dureseti Chidambarrao · Weston, US
• Ricardo A. Donaton · Somers, US
• David M. Onsongo · Austin, US
• Kern Rim · Yorktown Heights, US

Key dates

• Filing date: May 5, 2006
• Grant date: Jul 14, 2009
• Expiry date: Mar 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0167

Abstract

A semiconductor structure and method of manufacturing a semiconductor device, and more particularly, an NFET device. The devices includes a stress receiving layer provided over a stress inducing layer with a material at an interface there between which reduces the occurrence and propagation of misfit dislocations in the structure. The stress receiving layer is silicon (Si), the stress inducing layer is silicon-germanium (SiGe) and the material is carbon which is provided by doping the layers during formation of the device. The carbon can be doped throughout the whole of the SiGe layer also.