Active region spacer for semiconductor devices and method to form the same
US7560780B2 · kind B2 · utility
2Cited by
12References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2005 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Jun 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method for its fabrication are described. An active region spacer may be formed on a top surface of an isolation region and adjacent to a sidewall of an active region. In one embodiment, the active region spacer may suppress the formation of metal pipes in the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.