Techniques for determining overlay and critical dimension using a single metrology tool
US7561282B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Jan 19, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are semiconductor targets for measuring with a metrology tool having at least two incident beam modules and techniques for measuring the same. In one embodiment, the target includes an overlay target and a critical dimension (CD) target in the form of periodic features, and the overlay and CD targets are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool. In another embodiment, the target includes two overlay targets in the form of periodic features and that are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool. In another embodiment, the target includes two CD targets in the form of periodic features and that are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.