Process for producing high quality large size silicon carbide crystals
US7563321B2 · kind B2 · utility
11Cited by
14References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2004 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Dec 8, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.