Method and apparatus for processing polysilazane film
US7563481B2 · kind B2 · utility
1Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2004 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Sep 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.