Method of forming an interconnect including a dielectric cap having a tensile stress

US7563704B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chih-Chao Yang · Glenmont, US
• Kaushik Chanda · Fishkill, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Yun-Yu Wang · Poughquag, US
• Daewon Yang · Hopewell Junction, US

Key dates

• Filing date: Sep 19, 2005
• Grant date: Jul 21, 2009
• Expiry date: Oct 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.