Throughput enhancement for scanned beam ion implanters
US7566886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2006 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Sep 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30488
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.