Methods of contacting the top layer of a BAW resonator
US7567024B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Sep 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/132
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Methods of contacting the top layer in a BAW device by depositing a metal layer over the BAW device, patterning the metal layer so that the metal layer extends over and contacts the top electrode layer of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active resonator area, and has a common region laterally displaced from the top and bottom electrodes and electrically interconnecting the parts of the metal layer extending over and contacting the top electrode of the BAW device at the plurality of spaced apart locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.