Automated process control using optical metrology and photoresist parameters
US7567353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2007 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Jan 22, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To control a photolithography cluster using optical metrology, a structure is fabricated on a wafer using the photolithography cluster. A measured diffraction signal off the structure is obtained. The measured diffraction signal is compared to a simulated diffraction signal. The simulated diffraction signal is associated with one or more values of one or more photoresist parameters. The one or more photoresist parameters characterize behavior of photoresist when the photoresist undergoes processing steps in the photolithography cluster. The simulated diffraction signal was generated using one or more values of one or more profile parameters. The one or more values of the one or more profile parameters used to generate the simulated diffraction signal were derived from the one or more values of the one or more photoresist parameters associated with the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match, then one or more values of one or more photoresist parameters used in the photolithography cluster are determined to be the one or more values of the one or more photoresist parameters associated with the matching simulated dif…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.