Patent · US Active

Method of forming a wall structure in a microelectronic assembly

US7569424B2 · kind B2 · utility

25Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 15, 2006
Grant dateAug 4, 2009
Priority date
Expiry dateNov 28, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of forming a wall structure in a microelectronic assembly includes selectively depositing a flowable material on an upper surface of a first element in the microelectronic assembly, positioning a molding surface in contact with the deposited flowable material and controlling a distance between the upper surface of the first element and the molding surface with one or more objects positioned between the upper surface and the molding surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.