ALD metal oxide deposition process using direct oxidation
US7569500B2 · kind B2 · utility
2Cited by
257References
20Claims
0Family size
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Key dates
| Filing date | May 31, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Jun 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.