Inventor · Sunnyvale, CA, US

Vidyut Gopal

39Patents
8h-index
35Co-inventors
71Inventor score

Filing activity: May 7, 2001 → Jul 22, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US7067439B2 ALD metal oxide deposition process using direct oxidation Electricity 34 Expired
US6666979B2 Dry etch release of MEMS structures Performing Operations; Transporting 26 Expired
US8569104B2 Transition metal oxide bilayers Electricity 25 Active
US7569501B2 ALD metal oxide deposition process using direct oxidation Electricity 17 Active
US8288297B1 Atomic layer deposition of metal oxide materials for memory applications Electricity 13 Active
US6887732B2 Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device Performing Operations; Transporting 12 Expired
US8658511B1 Etching resistive switching and electrode layers Electricity 12 Active
US8883557B1 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition Electricity 8 Active
US8481357B2 Thin film solar cell with ceramic handling layer Emerging Cross-Sectional Technologies 6 Active
US9129894B2 Embedded nonvolatile memory elements having resistive switching characteristics Physics 6 Active
US8787066B2 Method for forming resistive switching memory elements with improved switching behavior Electricity 6 Active
US7696094B2 Method for improved planarization in semiconductor devices Electricity 4 Active
US9246096B2 Atomic layer deposition of metal oxides for memory applications Electricity 3 Active
US8913418B2 Confined defect profiling within resistive random memory access cells Physics 3 Active
US7972962B2 Planarization method using hybrid oxide and polysilicon CMP Electricity 3 Active
US8466446B2 Atomic layer deposition of metal oxide materials for memory applications Electricity 3 Active
US8912518B2 Resistive random access memory cells having doped current limiting layers Electricity 3 Active
US7829464B2 Planarization method using hybrid oxide and polysilicon CMP Electricity 2 Active
US8546275B2 Atomic layer deposition of hafnium and zirconium oxides for memory applications Electricity 2 Active
US8735217B2 Multifunctional electrode Electricity 2 Active
US7569500B2 ALD metal oxide deposition process using direct oxidation Electricity 2 Active
US9444047B2 Embedded nonvolatile memory elements having resistive switching characteristics Physics 1 Active
US8846443B2 Atomic layer deposition of metal oxides for memory applications Electricity 1 Active
US8741698B2 Atomic layer deposition of zirconium oxide for forming resistive-switching materials Electricity 1 Active
US8906736B1 Multifunctional electrode Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.