Dual crystal orientation circuit devices on the same substrate

US7569857B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Mohamad A. Shaheen · Portland, US
• Jack T. Kavalieros · Portland, US
• Brian S. Doyle · Portland, US
• Suman Datta · Beaverton, US
• Peter G. Tolchinsky · Beaverton, US

Key dates

• Filing date: Sep 29, 2006
• Grant date: Aug 4, 2009
• Expiry date: Nov 13, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211

Abstract

Embodiments of the invention provide a substrate with a device layer having different crystal orientations in different portions or areas. One layer of material having one crystal orientation may be bonded to a substrate having another crystal orientation. Then, a portion of the layer may be amorphized and annealed to be re-crystallized to the crystal orientation of the substrate. N- and P-type devices, such as tri-gate devices, may both be formed on the substrate, with each type of device having the proper crystal orientation along the top and side surfaces of the claimed region for optimum performance. For instance, a substrate may have a portion with a <100> crystal orientation along a top and sidewalls of an NMOS tri-gate transistor and another portion having a <110> crystal orientation along parallel top and sidewall surfaces of a PMOS tri-gate transistor.