Fabricating a memory cell array

US7569878B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rolf Weis · Dresden, DE
• Ulrike Gruening von Schwerin · Munich, DE

Key dates

• Filing date: Sep 8, 2005
• Grant date: Aug 4, 2009
• Expiry date: Feb 24, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A DRAM memory cell array is fabricated such that, for each memory cell of the array, the gate electrode is initially produced such that it is insulated from all the other gate electrodes assigned to a certain word line, and is only connected to the other gate electrodes assigned to the corresponding word line via the word line in a subsequent step.