Switching-controlled power MOS electronic device

US7569883B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Ferruccio Frisina · Gravina di Catania, IT
• Giuseppe Ferla · Catania, IT
• Angelo Magri · Mascalucia, IT
• Antonio Giuseppe Grimaldi · Mascalucia, IT
• Gaetano Bazzano · Floridia, IT

Key dates

• Filing date: Nov 21, 2005
• Grant date: Aug 4, 2009
• Expiry date: Nov 21, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks connected to a gate pad and at least a connection layer arranged in series to at least one of said conductive strip. Such gate structure comprising at least a plurality of independent islands formed on the upper surface of the conductive strips and suitably formed on the connection layers. Said islands being realized with at least one second conductive material such as silicide.