Electronic component having at least one vertical semiconductor power transistor

US7569920B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Otremba · Kaufbeuren, DE
• Klaus Schiess · Allensbach, DE

Key dates

• Filing date: May 10, 2006
• Grant date: Aug 4, 2009
• Expiry date: Jun 9, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electronic component includes a vertical semiconductor power transistor and a further semiconductor device arranged on the transistor to form a stack. The first vertical semiconductor power transistor has a semiconductor body having a first side and a second side and device structures, at least one first electrode positioned on the first side and at least one second electrode positioned on the second side. The semiconductor body further has at least one electrically conductive via. The via extends from the first side to the second side of the semiconductor body and is galvanically isolated from the device structures of the semiconductor body and from the first electrode and the second electrode.