Low-frequency bias power in HDP-CVD processes
US7571698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2005 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Apr 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.