Method for monitoring and calibrating temperature in semiconductor processing chambers
US7572052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2007 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Feb 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67276
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a non-destructive method for monitoring and calibrating chamber temperature. One embodiment of the present invention provides a method for measuring temperature comprising forming a target film on a test substrate at a first temperature, wherein the target film has one or more properties responsive to thermal exposure, exposing the target film to an environment at a second temperature in a range higher than the first temperature, measuring the one or more properties of the target film after exposing the target film to the environment at the second temperature, and determining the second temperature according to the measured one or more properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.