Method and device for continuously measuring silicon island elevation
US7573587B1 · kind B1 · utility
1Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2008 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Aug 25, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.