Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

US7575947B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Michael Iza · Goleta, US
• Troy J. Baker · Raleigh, US
• Benjamin A. Haskell · Lompoc, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Sep 8, 2006
• Grant date: Aug 18, 2009
• Expiry date: May 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.