Method of making three dimensional NAND memory
US7575973B2 · kind B2 · utility
328Cited by
18References
14Claims
0Family size
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Key dates
| Filing date | Mar 27, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Aug 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
A method of making a monolithic, three dimensional NAND string including a first memory cell located over a second memory cell, includes growing a semiconductor active region of second memory cell, and epitaxially growing a semiconductor active region of the first memory cell on the semiconductor active region of the second memory cell in a different growth step from the step of growing the semiconductor active region of second memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.