Method for forming fine pattern of semiconductor device
US7576009B2 · kind B2 · utility
18Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Nov 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etching barrier mask, removing the third mask pattern, forming a spin-on-carbon layer that exposes the upper portion of the second mask pattern, performing an etching process to expose the underlying layer with the spin-on-carbon layer as an etching barrier mask, and removing the spin-on-carbon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.