High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
US7577017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2006 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Oct 17, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.