Thin layer element and associated fabrication process

US7579226B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean-Charles Barbe · Seyssinet-Pariset, FR
• Maud Vinet · Voiron, FR
• Olivier Faynot · Seyssinet-Pariset, FR

Key dates

• Filing date: Aug 19, 2005
• Grant date: Aug 25, 2009
• Expiry date: Mar 6, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the layer-pattern assembly to stabilize the pattern on the layer.