Atomic layer deposition method for depositing a layer

US7579285B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Paul A. Zimmerman · Phoenix, US
• Matty Caymax · Leuven, BE
• Stefan De Gendt · Wijnegem, BE
• Annelies Delabie · Leuven, BE
• Lars-Ake Ragnarsson · New York, US

Key dates

• Filing date: Jul 10, 2006
• Grant date: Aug 25, 2009
• Expiry date: Feb 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02189
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.