Termination design for deep source electrode MOSFET
US7579650B2 · kind B2 · utility
12Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.