MEMS device and interconnects for same

US7580172B2 · kind B2 · utility

Assignee

• QUALCOMM MEMS Technologies, Inc. · US

Inventors

• Alan G. Lewis · Sunnyvale, US
• Manish Kothari · Cupertino, US
• John Batey · Danbury, US
• Teruo Sasagawa · Los Gatos, US
• Ming-Hau Tung · San Francisco, US
• Gregory D. U'Ren · Newport Beach, US
• Stephen Zee · San Jose, US

Key dates

• Filing date: Sep 29, 2006
• Grant date: Aug 25, 2009
• Expiry date: Aug 9, 2027

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2201/047
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode and a mechanical layer of the device. In an embodiment, this conductive layer is a sacrificial layer that is subsequently removed to form a cavity between the electrode and the movable layer. The sacrificial layer is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer that preferably comprises aluminum.