Flash memory cells with reduced distances between cell elements
US7580279B2 · kind B2 · utility
0Cited by
20References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2006 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Oct 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope downward at an angle determined by the thickness of the ARC. The etching process could include CF4 chemistry. The inner edges of the sloped ARC areas reduce the original photo-defined space since the underlying layers are now defined by the sloped edges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.