Patent · US Active

Readout of multi-level storage cells

US7580297B2 · kind B2 · utility

14Cited by

3References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Nirschl · Putzbrunn, DE
Jan Otterstedt · Unterhaching, DE

Key dates

Filing date	Mar 30, 2007
Grant date	Aug 25, 2009
Priority date	—
Expiry date	Jul 19, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5634
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A multi-level sensing scheme compares the state of a multi-level storage cell with monotonously changing reference states, which are associated to different information values. That particular information value is identified to be the information stored in the multi-level storage cell, which has associated that reference state which, in a changing direction, firstly exceeds the state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.