Polishing composition for a tungsten-containing substrate
US7582127B2 · kind B2 · utility
18Cited by
23References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2007 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Feb 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.