Semiconductor chip having gettering layer, and method for manufacturing the same
US7582950B2 · kind B2 · utility
1Cited by
8References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2005 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.