Method of producing highly strained PECVD silicon nitride thin films at low temperature
US7585704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2005 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Apr 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first portion of an amorphous film stressor material on at least a surface of a substrate, said first portion having a first state of mechanical strain defining a first stress value. After the forming step, the first portion of the amorphous film stressor material is densified such that the first state of mechanical strain is not substantially altered, while increasing the first stress value. In some embodiments, the steps of forming and densifying are repeated any number of times to obtain a preselected and desired thickness for the stressor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.