Wafer dividing method using laser beam with an annular spot
US7585751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2008 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Jun 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method includes a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and a cutting step for allowing a cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.