System and method for faceting a masking layer in a plasma etch to slope a feature edge
US7585775B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2005 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Jan 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with a plasma that has a high sputter etch component. The plasma etch process removes material from vertical edges of the masking layer to form a sloped surface at each vertical edge of the masking layer. A layer of conductive material is then applied to the masking layer. When the layer of conductive material is subsequently removed by an overetch process the sloped profile of the masking layer facilitates the removal of stringers of conductive material without using an excessively lengthy overetch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.