Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
US7586108B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Apr 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.