Edge structure with voltage breakdown in the linear region
US7586161B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2006 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Aug 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
One aspect of the invention relates to an edge structure for a semiconductor component having two electrodes arranged opposite one another on opposite sides of a semiconductor body having a doped zone of the first charge carrier type. The semiconductor body has at least one doped zone of the second charge carrier type extending from a surface into the depth of the semiconductor body and serving for forming a pn junction located in a central region surrounded by an edge region between the two electrodes. The edge region has at least one rectilinear edge section and at least one curved edge section and is formed in such a way that a breakdown voltage in the at least one rectilinear edge section is less than a breakdown voltage in the at least one curved edge section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.