Methods of controlling morphology during epitaxial layer formation
US7588980B2 · kind B2 · utility
7Cited by
83References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2007 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Sep 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first aspect of the invention provides a method of selectively forming an epitaxial layer on a substrate. The method includes heating the substrate to a temperature of less than about 800° C. and employing both silane and dichlorosilane as silicon sources during epitaxial film formation. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.