Andrew Lam
9Patents
4h-index
19Co-inventors
46Inventor score
Filing activity: Jul 6, 2004 → Feb 27, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7494545B2 | Epitaxial deposition process and apparatus | Electricity | 241 | Expired |
| US7897495B2 | Formation of epitaxial layer containing silicon and carbon | Electricity | 124 | Active |
| US7488690B2 | Silicon nitride film with stress control | Electricity | 9 | Expired |
| US7588980B2 | Methods of controlling morphology during epitaxial layer formation | Electricity | 7 | Active |
| US7772074B2 | Method of forming conformal silicon layer for recessed source-drain | Electricity | 3 | Active |
| US7776698B2 | Selective formation of silicon carbon epitaxial layer | Electricity | 3 | Active |
| US9064960B2 | Selective epitaxy process control | Electricity | 2 | Active |
| US7718225B2 | Method to control semiconductor film deposition characteristics | Electricity | 2 | Active |
| US8991332B2 | Apparatus to control semiconductor film deposition characteristics | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.