Methods for growing low-resistivity tungsten film
US7589017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2005 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Sep 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.