Methods of fabricating transistors including supported gate electrodes

US7592211B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Scott Sheppard · Chapel Hill, US
• Scott Allen · Apex, US

Key dates

• Filing date: Jan 17, 2006
• Grant date: Sep 22, 2009
• Expiry date: Apr 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening, and a second portion of the gate electrode is spaced apart from the protective layer and laterally extends beyond the first portion. Related devices and fabrication methods are also discussed.