Method for fabricating silicon carbide vertical MOSFET devices

US7595241B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Kevin Sean Matocha · Rexford, US
• Jody A. Fronheiser · Delmar, US
• Larry Rowland · Scotia, US
• Jesse Berkley Tucker · Knightdale, US
• Stephen Daley Arthur · Glenville, US
• Zachary Matthew Stum · Niskayuna, US

Key dates

• Filing date: Aug 23, 2006
• Grant date: Sep 29, 2009
• Expiry date: Aug 2, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.