Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics
US7595244B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Oct 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Fabrication of two differently configured like-polarity insulated-gate field-effect transistors (40 or 42 and 240 or 242) entails introducing multiple body-material semiconductor dopants of the same conductivity type into a semiconductor body. Gate electrodes (74 or 94) are defined such that each body-material dopant reaches a maximum concentration below the channel surface depletion regions, below all gate-electrode material overlying the channel zones (64 or 84), and at a different depth than each other body-material dopant. The transistors are provided with source/drain zones (60 or 80) of opposite conductivity type to, and with halo pocket portions of the same conductivity type as, the body-material dopants. One pocket portion (100/102 or 104) extends along both source/drain zones of one of the transistors. Another pocket portion (244 or 246) extends largely along only one of the source/drain zones of the other transistor so that it is asymmetrical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.