Passivated stoichiometric metal nitride films
US7595270B2 · kind B2 · utility
13Cited by
44References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Jun 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming passivated stoichiometric metal nitride films are provided along with structures incorporating such films. The preferred methods include contacting a substrate with alternating and sequential pulses of a metal source chemical, one or more plasma-excited species of hydrogen and a nitrogen source chemical to form a stoichiometric metal nitride film, followed by exposure of the stoichiometric metal nitride film to a source chemical of a passivating species to form a passivation layer over the stoichiometric metal nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.