Film-depositing target and preparation of phase shift mask blank
US7598004B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Aug 2, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3464
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.