Patent · US Active

Enhanced write abort mechanism for non-volatile memory

US7599241B2 · kind B2 · utility

4Cited by
38References
35Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2007
Grant dateOct 6, 2009
Priority date
Expiry dateAug 6, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/225
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a non-volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a “low-voltage” signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the “low-voltage” signal is deasserted and to suspend writing data while the “low-voltage” signal is asserted. In response to assertion of the “low-voltage” signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the “low-voltage” signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.